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    • 专利摘要:
    Half-bridge gate driving circuit to provide gate driving circuits in a bi-hecto Celsius (200 degrees Celsius) operating environment with various functions including combinations of logic inputs at multiple levels, noise immunity, fault protection, overlap protection, pulse width modulation, high frequency modulation with transformer based isolation, high frequency demodulation back to pulse width modulation, dead time generator, level shift for the high side transistor, overvoltage protection and undervoltage lockout.
    公开号:BE1022157B1
    申请号:E2012/0429
    申请日:2012-06-22
    公开日:2016-02-22
    发明作者:Bradley Alan Reese；Javier Antonio Valle-Mayorga；Ivonne Escorcia-Carranza；Khoa Minh Phan；Caleb Paul Gutshall
    申请人:Cree Fayetteville, Inc.；Arkansas Power Electronics International, Inc.；
    IPC主号:
    专利说明:

    HIGH-TEMPERATURE HALF-BRIDGE GATE CONTROL
    CROSS REFERENCE TO RELATED APPLICATIONS
    This application takes precedence over US patent application 61 / 571,206 filed on 22/06/2012 with the title HIGH TEMPERATURE HALF-BRIDGE PORT CONTROL, which is hereby incorporated in its entirety as a reference.
    BACKGROUND OF THE INVENTION 1. Field of the invention
    The present invention relates to improvements in gate driver circuits. The invention more particularly relates to improvements that are particularly suitable for providing gate control circuits in a bi-hecto Celsius (200 degrees Celsius) operating environment with various functions including combinations of multi-level logic inputs, noise immunity, error protection, overlap protection , pulse duration modulation, high frequency modulation with transformer-based isolation, high frequency demodulation back to pulse duration modulation, dead time generator, level shift for high side transistor, over voltage protection and under voltage lockout. The present invention relates in particular to a single circuit that offers all these functionalities in a compact robust package. 2. Description of the prior art
    As will be appreciated by those skilled in the art, half-bridge gate controls are well known in various forms. Patents containing information relating to bird protection include:
    U.S. Patent No. 6,556,053, issued to Stanley on April 29, 2003, entitled Half-bridge port control optimized for hard-switching; U.S. Patent No. 7,336,160 issued to Rusu, et al. on October 14, 2008 entitled Half-bridge adaptive dead time circuit and method therefor; U.S. Patent No. 7,885,049, issued to Iwabuchi, et al. on March 30, 2010, entitled Level shift circuit and power supply; and U.S. Patent No. 7,965,522, issued to Homberger, et al. on June 21, 2011 entitled Low Loss, Non-Resistant High Temperature Gate Control Circuits. Each of these patents is hereby incorporated by reference in its entirety.
    The abstract of U.S. Patent No. 6,556,053, issued to Stanley on April 29, 2003 entitled Half-bridge port control optimized for hard-switching reads as follows: Half-bmg port control circuit comprising two separate floating high-side control circuits for operating of a switching circuit with a high side switch and a low side switch. Each of the driving circuits includes input control logic that relates to a supply signal with a potential that becomes negative with respect to the negative common terminal of the switches, thereby promoting the operation of the switching circuit. The circuit may further comprise signal translation phases for translating control signals into the control logic of the control circuits. The signal translation phases comprise a plurality of cascoded parasitic transistors that offer a neutralizing capacity for minimizing mass.
    The abstract of U.S. Patent No. 7,336,160, assigned to Rusu, et al. On Oct. 14, 2008 entitled Half-BMG Adaptive Dead Time Circuit and Method therefor, reads as follows: A high voltage offset detection circuit records the voltage at the center of a switch half bmg and can determine when the voltage at the center reaches a certain value for avoiding hard switching in the half bmg switches. The voltage at the center of the switch half bmg is applied via a buffer to a MOSFET whose current is limited to produce a voltage representing the voltage of the center point of the switch half bmg. The voltage produced by the MOSFET can be supplied to a comparator with a threshold input for obtaining a signal indicating when the switches of the switch can be switched on half bmg to avoid hard switching. An adaptive dead time circuit and method thereof may comprise the above detection circuit, a first circuit for generating a first signal indicative of a high to low transition of the voltage at the center; and an output circuit for generating an adaptive dead-time output signal based on it. A second circuit can generate a second signal indicative of a low to high voltage transition; wherein the output circuit generates the adaptive dead-time output signal based on both the first and second signals. The second circuit preferably generates the second signal by reproducing the first signal. The first circuit can generate the first signal by charging a capacitor in response to pulses, and the second circuit can generate the second signal by charging a second capacitor according to said first capacitor, and the adaptive dead-time output signal can respond to the charges of the first and second capacitors.
    The abstract of U.S. Patent No. 7,685,049, issued to Iwabuchi, et al. On March 30, 2010, entitled Level shift circuit and power supply, reads as follows: In a level shift circuit comprising: an inverter circuit with a series circuit of a Pch-type transistor and an Nch-type transistor connected between electrodes of a floating power supply; and a transistor Q1 in which a drain terminal and a source terminal are connected between an input terminal of the inverter circuit and a ground, a drain terminal and a source terminal of a transistor Q2 being connected between one terminal of the floating power supply and the drain of the transistor Q1, and a drain terminal and source terminal of a transistor Q3 are connected between a control terminal of the transistor Q2 and the ground.
    The abstract of U.S. Patent No. 7,965,522, issued to Homberger, et al. On June 21, 2011 entitled Low Loss Noise Resistant High Temperature Gate Drivers, is as follows: High temperature gate drivers with improved noise resistance and minimized loss are implemented with high temperature components with a small magnetic isolation transformer. Input wide pulse duration modulated signals are converted to offsetting narrow pulses for crossing the small magnetic transformer that minimizes insulation losses. One embodiment describes narrow time and voltage offset single pulses that control a sequence and reset regeneration of the pulse duration output on the secondary side of the transformer. Another embodiment describes a plurality of simultaneous voltage offset pulses that cross the transformer and load a threshold capacitor for both noise filtering and checking the pulse duration regeneration on the secondary side of the transformer.
    It is clear from these existing references that these prior art patents are very limited in terms of description and use, and that an improved half-bridge gate drive is required to resolve these limitations. SUMMARY OF THE INVENTION The present invention relates to an improved half-bridge gate control using high temperature components. In accordance with one exemplary embodiment of the present invention, a half-bridge gate driver is provided using multi-level logic inputs, noise immunity, error protection, overlap protection, pulse duration modulation, high frequency modulation with transformer-based isolation, high frequency demodulation back to pulse duration modulation, dead time generator, level shift for high side transistor, surge protection and undervoltage lockout. Remarkable is the construction of modulation circuits that can be adapted to different modulations, the use of low-power inverters, and delay circuit integration. These and other objects and advantages of the present invention, together with novel features thereof, will be apparent from the following detailed description of the invention.
    SHORT DESCRIPTION OF THE DIFFERENT VIEWS OF THE
    DRAWINGS
    On the following drawings, which form part of the specification and which must be interpreted together with it, and in which, when possible, similar reference numbers are used to refer to similar parts in the different views, the following applies:
    Figure 1 is an HTSOI ASIC block diagram.
    Figure 2 is a block diagram of the primary side of the HTSOI ASIC.
    Figure 3 is a block diagram of the secondary side of the HTSOI ASIC.
    Figure 4 is a diagram of the logical level translator with hysteresis.
    Figure 5 is a diagram of the PDM conditioning device.
    Figure 6 is a diagram of the modulator.
    Figure 7 is a graph of the primary waveforms of the gate driver including the input of channel 1 (top), the input of channel 2 (high in the middle) and output 1 of channel 2 and output 2 of channel 2 (bottom).
    Figure 8 is a graph of the VCO output frequency vs. input voltage and temperature.
    Figure 9 is a diagram of the demodulator.
    Figure 10 is a diagram of the dead time generator.
    Figure 11 is a diagram of the delay cell of the dead time generator.
    Figure 12 is the level shift scheme.
    Figure 13 is a diagram of the PDM logic of the PDM generator.
    Figure 14 is a diagram of the oscillator of the PDM generator.
    Figure 15 is the fast comparator diagram.
    Figure 16 is the overvoltage protection diagram.
    Figure 17 is the advanced blanking scheme.
    Figure 18 is the undervoltage lockout and active pull down scheme.
    Figure 19 is a diagram of the output totem pole and the high side buffer.
    Figure 20 is a graph of the input (top) and output (bottom) of the gate control at 20 kHz.
    Figure 21 is a graph of propagation delay from the input to the output of the gate driver.
    Figure 22 is a graph of the jitter from the input to the output from the gate driver.
    Figure 23 is a graph of the rise and fall times of the gate drive output.
    Figure 24 is a graph of the dv / dt noise immunity of the gate driver.
    DETAILED DESCRIPTION OF THE INVENTION
    As shown in Figure 1 of the drawings, an exemplary embodiment of the present invention is generally shown as a high temperature silicone on insulator (HTSOI) application specific integrated circuit (ASIC) gate driver 100. This HTSOI ASIC gate driver 100 is an isolated gate driver which can control the upper and lower power transistors of a half-bridge configuration power circuit. This ASIC port driver 100 is based on ΑΡΕΙ, Inc.'s individual port driver technology (U.S. Patent No. 7,965,522), although some of the blocks are implemented differently. The ASIC gate driver 100 consists of a block on the primary side 102 and a block on the secondary side (106) that are electrically isolated by a transformer 104, the block on the secondary side sending 106 to a totem pole output 208 as shown on figure 1. In addition, protection circuits and a pulse duration modulation (PDM) generator are integrated in the ASIC.
    Figure 2 shows the components of the block on the primary side 202 of the gate driver. The logic level translator 202 will accept either 3.3V or 5V logic signals 201. 3.3 V logic is level shifted to 5 V logic for further distribution to the gate control. This logic level translator 202 also has a Smitt trigger input that will increase noise immunity at the gate driver input. The pulse duration modulation conditioner 204 (PDM) circuit provides logical function for processing fault conditions and provides overlap protection for the two PDM inputs. The amplitude of the primary side 206 modulator modulates the high frequency carrier PDM signals that will be sent by an isolation transformer to the secondary side block 106 of the gate driver 100.
    Figure 3 shows the components of the block side 106 of the gate driver 100. The demodulator 302 converts the isolated modulated signal 301 from the isolation transformer 104 back to a copy of the original PDM shown as a logic signal on the secondary side 304. The dead time generator 306 creates an output and additional signal sequence 308 of the PDM signal with a short period in which both signals are logic 0. These two output complement signals in the signal sequence 308 control the two transistors in the output totem block 208; the signals 308 must therefore have a certain dead time to prevent both transistors from running simultaneously (which causes shoot-through). The level shift 310 is a floating buffer between the dead time generator 306 and the output totem pole 108.
    In the following parts, the components of the block on the primary side 102 and the block on the secondary side 106 of the gate driver 100, as well as the protection circuits and PDM controller integrated therein, are described in detail. All these circles have been tested to at least 225 degrees Celsius. LOGICAL LEVEL TRANSLATOR (LLT) 202
    The logic level translator 22 (LLT) is a voltage increase / decrease circuit 400. It receives a pulse input signal 402 with a peak to peak value of 3.3 V or 5 V and converts it into an inverting output signal 414 with a peak to peak of 5 V or 3.3 V respectively. The inputs 402 to the LLT 202 are signals that come from distant environments with a lot of noise. A simple hysteresis circuit 404 (Schmitt trigger) was therefore added to the input 402 of the LLT 202. Since this hysteresis circuit 404 is very small and sensitive to the sizes of the hysteresis transistor 409, a buffer 406 was needed between the hysteresis circuit 404 and the actual translator circuit 418.
    It is important to note from Figure 4 that the hysteresis and buffer feed 408 for the buffer 406 is the same as for the hysteresis circuit 404 shown as AVDD_HYST 408 (peak-to-peak of the input signal may not be changed). This current supply 408 must be the same as the peak-to-peak value of the input signal 402. However, the current supply of the translator 410 for the translator circuit 418 is different depending on the function of the translator circuit 418 (increase or decrease).
    The buffer 406 after the hysteresis circuit 404 consists of 4 inverters in series with proportionally increasing sizes in their width and length ratios. The hysteresis circuit 404 is a simple Schmitt trigger where the hysteresis is almost exclusively dependent on the threshold level of the input converter 403. The two transistors 409 in the circuit are feedback transistors which help to draw the center of the circuit high or low depending on the threshold level of the second inverter 405. Since this circuit must operate with either 3.3 Vp-p or 5 Vp-p inputs, a significant compromise must be found to satisfy both inputs and still offer some hysteresis.
    The high voltage at the input (VIH) and the low voltage at the input (VIL) were the values used to determine the hysteresis band. In the case of a 5 Vp-p signal, these values are approximately 3.5 V and 1.5 V, respectively, and in the case of 3 Vp-p signals, these values are approximately 0.7 Vcc (2.31 V, respectively). ) and 0.2 Vcc (0.66 V). The HTSOIIC gate driver 100 uses two voltage increase / decrease circuits 400 on the primary side thereof. The staircase output signals 203 from the voltage increase / decrease circuits 400 are used as control signals for the PDM conditioner 204. PULSE-DURATION MODULATION CONDITIONER 204
    Figure 5 shows the schedule of the pulse duration modulation conditioner circuit 204. The purpose of the PDM conditioner 204 is to provide an overlap protection and basic error processing capacity to the downstream higher gate driver circuits. Each stage output signal 203 is connected to a pulse duration buffer 502 consisting of a chain of four ratio-ordered converters (nor-gate 510, or-gate 512, or-gate 514, and nor-gate 516 or nor-gate 518) to provide sufficient power supply for controlling a 30pF load on conditioned output three 520 and conditioned output four 522.
    When an error is detected in the system, an error signal 504 is sent to the conditioning latch 506 (D-FF) which will go to the failure status. Conditioned output two 508 will become high, which is supported by OR gate 512 and OR gate 514. This will cause conditioned output three 520 and conditioned output four 522 to be logic low regardless of what the converted PDM input is on stage output signal 203 The release signal 530 from input three is used for briefly (non-latching) switching off of the PDM outputs 520, 522. When the malfunction is resolved, a release signal 550 is sent to the D-FF 506 which will come out of the malfunction status . This signal 550 can come from an external controller or conditioned output and one 532 can be used. If conditioned output one 532 is used, the failure status is disabled when both transformed stair output signals 203 are high. Nor gate 510 disables the PDM outputs 520, 522 when both transformed stair output signals 203 are low, providing protection against overlap. MODULATOR 206
    The modulator 206 can modulate the PDM outputs 520, 522 on a high-frequency carrier with either amplitude modulation (AM) or frequency modulation (FM). The oscillator for the modulator is a voltage controlled oscillator 600 (VCO); FM can therefore be achieved by sending the PDM control signal again at the input of the VCO. The modulator can also turn its output on and off, providing it with on-off (OOK), a form of AM.
    The VCO of the modulator 600 uses a one-end ring of low-voltage inverters 616 and a modulator patch 604 to produce a primary modulated output 605 via differential outputs 606, 608, 610, 612. The use of the modulator patch 604 allows the The operating cycle of the VCO 600 remains reasonably stable regardless of the frequency changes. The low-voltage inverters 602 used in the VCO allow the oscillating frequency to be controlled with the aid of an external voltage input 606. With the aid of an additional current source transistor 614 and sink transistor 618 in series with the PMOS and NMOS of the inverter 616 respectively, For example, the current flowing through the inverter 616 can be limited by controlling the gate voltage of the current source transistors 614 and sink transistors 618.
    The two outputs of the modulator latch 604 are each connected to one input of two NOR ports 620 of the modulator. The remaining NOR gate inputs 621 of the NOR gates 620 are controlled by conditioned output three 520 and conditioned output four 522 generated by the PDM conditioner 204. It is these circuits that enable the ALSO function. If FM is preferred, simply connect the remaining NOR gate inputs 621 to logic 0. Note that two PDM channels, using this topology, can be modulated using ALSO or only one channel if FM is used. The outputs of the NOR gates 620 are buffered with modulator buffers 622 to increase the output current.
    Implementation of FM requires detailed knowledge of the performance of the modulator to design a demodulator that will correctly decode the modulated signal. This data has just become available, so the FM demodulator is not yet designed. However, it will probably be implemented with traditional techniques using the same VCO circuit as the modulator. However, it also requires very simple demodulation circles that were produced in the prototype. Therefore, most of the following test results also used as the modulation scheme.
    Figure 7 shows that the input waveforms 702, 704 form the conditioned output three 520 and conditioned output four 522 and output waveforms 706, 708 for the OOK modulator 600. The output 606, 608, 610, 612 of the modulator 600 switches at the carrier frequency during a low PDM signal and is zero during a high PDM signal. The carrier frequency can be adjusted by the input voltage 606 to the VCO 600.
    Figure 8 shows the variation in carrier frequency 802 due to input voltage 803 and temperature 804. When the VCO input 803 is set to 2.5 V, the carrier frequency 802 remains a reasonably constant 2.5 MHz with respect to temperature 804. Higher carrier frequency 802 allows greater noise immunity, higher PDM frequency and faster propagation delay. As the carrier frequency 802 rises, the modulator output becomes more triangular, which can lead to errors in data transfer. In practical terms, the 2-5 MHz range is the most useful range for the ASIC port control 100. DEMODULATOR 302
    The demodulator 302 decodes the oscillating isolated modulated signals 301 received from the transformer 104 into a drive signal 107 that is coordinated with the original PDM signal. As discussed in the previous section, this version of the ASIC gate driver 100 includes an OOK demodulator 302. The demodulator circuit 900 includes a demodulator input phase 902 consisting of four diodes 904, 906, 908, 910 connected in a two-phase rectifier configuration, such as shown in Figure 9. The isolated modulated output 301 of the signal isolation transformer 104 is connected to demodulator input phase 902, which is rectified in external high pass filter connection 940. External filter connection pass 940 is externally connected to a parallel RC circuit that filters the high frequency carrier, but not necessarily DV / DT noise. Increasing the capacitance value can increase noise immunity, but it adds unequal propagation delay to the gate driver. When a signal is present at the output 301 shown as IN1 and IN2, the capacitor will charge. When the signal stops, the parallel resistor 912 will discharge the capacitor.
    The rectifier is followed by an inverter 914 for buffering the demodulated signal 913. First, the external resistor connection 920 and second external resistor connection 922 are externally connected via a resistor 912, which forms a low-pass filter 924 (RC filter) with the internal capacitor 916 which is connected to output 922. This RC filter 924 reduces the dv / dt-induced noise influence on the demodulator while adding symmetrical propagation delay. The filter 924 is followed by a buffer 930 consisting of 3 size-scaled converters for forming the logic signal on the secondary side 304, which is then connected to the dead-time generator 306. DEAD TIME GENERATOR 306
    The dead time generator 306 (DTG) receives the demodulated PDM signal and supplies two non-overlapping output signals 308, one in addition to the other. One output signal follows the input (with some delay) while the other is the opposite of the first with a certain period in which both signals are logic 0. Figure 10 and Figure 11 show the schematic circuit 1000 of the dead time generator 306 and the schematic circuit of the transistor level 110 of one of its delay cells, respectively.
    The DTG circuit 1000 uses the basic principle of using two NOR gates 102, 1004 and an inverter 1006 to produce two non-overlapping signals 1008, 1010. Because of the requirements of at least 90 ns of dead time, circuits of delay circuits 1020, 1022, 1024, 1026 together with NOR / OR gates (NOR) 102, 1004, (OR) 1030, 1032 used before sending the output signal 1008, 110. The DTG circuit 100 has the capacity to 2 pF load to be processed (the input capacity of the level shift controlled by the DTG output signals is 1.5 pF). This was accomplished by inserting a dead time buffer 1040, 1042 into the two output signals 1008, 1010 that form the output and additional signal sequence 308.
    Note that there are three different types of delay circuits 120, 1022, 1024, 1026 depending on how much delay was required at that phase of the circuit. As shown in Figure 11, the delay circuits 1100 consist of circuits with low-current converters 1102 with internal capacitors 1104 between the circuits (the size of the capacitor 1104 is the only difference between these delay circuits 1020, 1022, 1024, 1026). LEVEL SHIFT 310
    The output phase of the gate driver of the prototype consists of two separate Silicone Carbide (SiC) junction field effect transistors (JFETs) connected in a totem pole configuration 108. The output total temp transistors 110, 112 will be on the ASIC in future revisions. The level shift 310 allows the digital signal of the dead time generator 306 to float with the source 308 of the high side totem pole transistor 110. The buffer for the low side totem pole transistor 112 is also included in this block, although it does not provide a level shift function.
    Figure 12 shows the level shift circuit 1200 diagram. The gate of the high side totem pole transistor 110 requires higher voltage (relative to the source) than the current rail voltage supply to turn on the device. The level shift circuit 1200 uses a self-starting capacitor to supply current to the level shift when it is floating with the source of the high side transistor 110. The self-starting capacitor is externally connected from path capout 1202 to capout 1204. When the low side transistor 112 of the output totem pole is turned on , the self-starting capacitor charges via diodes 1206 and 1208 of the 6V power supply 1210. Because of the voltage stored by the capacitor, the self-starting voltage rises 5 volts above the power rail voltage of the supply phase which provides sufficient gate voltage to the high side transistor 110 to switch.
    PDM GENERATOR
    The PDM generator is intended to be used for the isolated power supply of the gate driver 950 (not as PDM inputs to the gate driver), which will feed the secondary sides of the gate driver 100. It is therefore considered to be a part of the gate driver 100 and is included on the same IC. Although this circuit could be used in some applications to supply the PDM inputs to the gate driver 100, it does not include advanced features required for most high power systems.
    The PDM generator consists of two circuits: PDM logic 1300 and an oscillator 1400, as shown in Figure 13 and Figure 14, respectively. The oscillator 1400 generates a square wave signal with a high utilization coefficient 1402 and an ascending signal 1404 at the same frequency. The operating cycle of the square wave 1402 sets the maximum operating cycle of the output of the PDM generator. As shown in Figure 13, the ascending signal 1404 is then compared to the output of the error amplifier 1302, EAOUT, which produces a pulse duration modulated signal. The generator also includes logic for supporting advanced blanking 1304, a method for noise reduction.
    As shown in Figure 14, the oscillator 1400 was implemented using two comparators 1406, 1408 that monitor the charging and discharging of a capacitor 1410 via a constant current source 1412. The signals generated by the comparators are used to set and reset of an oscillator flip-flop D-FF 1414. The constant current source 1412 was implemented using a current-controlled circuit to achieve larger current using different phases. An external resistor 1416 is used to adjust the current level.
    As shown in Figure 13, the RAMP signal 1404 in the PDM log is connected to the CAP output 1404 of the oscillator circuit 1400. Although this is not shown on these diagrams, the OSCOUT signal 1402 of the oscillator 1400 must pass through an inverter and then be connected to the OSC node 1306 in the PDM logic circuit.
    FAST COMPARATOR
    The fast comparator is for general use in the implementation of security circuits, PDM generation and other functionalities in the IC port driver 100. Fast operation is desirable since security circuits must be able to respond to failures as quickly as possible. Easily configured hysteresis is also desirable to meet the needs of the different circuits that use the comparator. Figure 15 shows the schematic circuit of the fast comparator 1500.
    The design consists of three phases: Pre-amplifier 1502, latch 1504 and post-amplifier 1506. The jump characteristic times of the pre-amplifier 1502 and latch 1504 complement each other, resulting in fast, bistable functionality. The preamplifier 1502 consists of both a PMOS and NMOS differential input phase to maximize the common mode range of the input. The latch design 1504 is such that the ratio of the cross-coupled devices to the diode-connected devices is not linearly proportional to the amount of hysteresis. The latch output is bistable, the analog differential input being transformed into a pseudo-digital signal. The post-amplifier 1506 consists of a self-biased differential amplifier 1508 followed by an output buffer converter 1510. This transforms the input of the bistable latch into a rail-to-rail output. The output buffer converter 1510 provides stronger control to the comparator.
    The fast comparator has a hard-switching propagation delay of less than ns when driving an on-chip 0.5 pF charge. With 60 mV overload, the propagation delay is less than 40 ns. Ascent and descent times do not exceed 7.5 ns. The common mode range of the input ranges from 1.0 to 3.5 V. Hysteresis levels are implemented from no hysteresis to VREF ± 65 mV.
    OVERVOLTAGE PROTECTION
    The overvoltage protection (OCP) circuit 1600 monitors the current through the power supply and switches off the PDM signal (switches off the power supply) if a fault is detected. The current is monitored using a small detection resistor, RSENSE, which is connected in series with the power phase between the low side device and the ground. RSENSE is such that the voltage loss is therefore 0.5V when the maximum permitted voltage occurs. The OCP also includes a leading-edge blanking (LEB) sub-circuit that disables an invalid OCP output when high currents are expected during switch transitions. With the PDM signal from the gate driver as its input, the LEB can anticipate when high currents are expected. Figure 16 and Figure 17 show diagrams of OCP and LEB respectively.
    The OCP consists of the above-described fast comparator 1500 preceded by a voltage transformer circuit 1600. The voltage transformer 1600 was designed to amplify the input voltage from 0.5 V to 2.5 V when the comparator is operating optimally. The OCP propagation delay is not greater than 60 ns, in view of the very fast failure detection function.
    The LEB circuit 170 is based on setting and resetting a D flip-flop 1702. It consists of a D flip-flop 1702, fast comparator 1704 and active and passive devices. The blanking time can be programmed by an external capacitor 1706, CLEB. The PDM input signal sets the flip-flop, starting the blanking time and loading CLEB. The comparator checks the voltage of the CLEB against a set reference, and resets the flip-flop as soon as the reference is exceeded. This ends the blanking time and discharges the CLEB. The LEB can produce blanking times from 75 ns to 3.25 ys.
    UNDER-VOLTAGE LOCK-OUT
    The undervoltage lockout (UVLO) circuit 1800 shown in Figure 18 controls the power supply from the gate driver 650 to check that sufficient voltage levels are present for proper circuit operation. This is particularly important in start-up conditions. This protection must include hysteresis to provide immunity to slowly changing input signals or high-noise input signals that can produce a high-noise output if not addressed. The UVLO circuit 1800 includes a sub-circuit that is driven by the UVLO output 1804 that acts to actively LOW a node 1808 connected to VDD via a 10 kQ push resistor. This circuit is called the active pull-down (APD) circuit 1806.
    The UVLO circuit consists of the fast comparator 1802 with a hysteresis band of ± 0.05 V. The VREF input 1810 is generated by a band gap reference circuit or a diode terminal and the VIN input 1812 is generated by a resistor distributor that is connected with VDD 650. When properly calibrated, this device causes the ULVO output 1804 to switch when VDD 650 goes above or below the 4.5 ± 0.05V threshold. The APD circuit 1806 consists of a self-biased current valley that is turned on by the UVLO output 1804. When using this arrangement, the node 1808 to be drawn to LOW should not exceed 1.9 V.
    TOTEMP A ALUT WAY TO STURIN G
    The original purpose of the level shift 310 was to directly control the output phase of the gate driver consisting of two normally-out SiC power JFETs 110, 112 in a totem pole configuration. However, the level shift circuit 1200 did not have sufficient current capacity to drive the high side transistor 110 at high speed; therefore, a separate buffer circuit 1900 was added to the totem pole output 108 as shown in the separate buffer circuit 1900 of Figure 19. These circuits 1900 are reintegrated into the ASIC in future revisions. The four inputs 1202, 1204, 1212, 1214 in the box on the left indicate outputs of the ASIC level shift. Buffer capacitor 1902 is the self-starting capacitor described in detail above in the level shift section. Buffer resistor 1904 provides a charge to source follower output 1204 of the level shift that is applied to the JFET of external source follower 1908, a small signal normally-SiC JFET. Follower capacitor 1910 capacitively couples the output of follower JFET 1908 with the gate of the high side output transistor 1912 and follower resistor 1916 provides the stationary current required to keep the follower JFET 1908 switched on after the initial transition. Middle diode 1918 pulls down the source of follower JFET 1908 when lower JFET 1914 is turned on, pulling the gate of upper JFET 1912 down and turning it off. Gate diode 1920 is then pushed forward which resets the voltage across follower capacitor 1910. This action is necessary to provide fast transitions on the gate of upper JFET 1912. FULL GATE CONTROL 100
    The ASIC port driver 10 was constructed as several separate blocks to limit risk. These blocks were externally connected to build the full port control, but will be directly interconnected with the final version of the ASIC.
    Fig. 20 shows the input waveform 2002 and output waveform 2004 of the full gate driver 100 at a switching frequency of 200 kHz. The input-to-output propagation delay 2102 and jitter 220 are plotted vs. the temperature of the gate control 2104 on Figure 21 and Figure 22, respectively. The rise time 2302 and fall time 2304 of the output of the gate control are plotted on Figure 23.
    Figure 24 shows dv-dt measurement 2400 for the gate control from room temperature to 250 ° C. A fast power transistor was used in a clamped inductive test to generate the dv / dt. The source output of the secondary of the gate driver was connected to the drain of the transistor and the grounding input of the primary of the driver was connected to the source of the transistor. Both switch-on and switch-off phases were trouble-free at the maximum dv / dt capacity of the test circuit, 46.8 kV / ps.
    The reference numbers used in the detailed description and in the figures correspond to the following elements: gate control 100 block on the primary side 102 transformer 104 block on the secondary side 106 control signal 107 totem pole output 108 logical signals 201 logical level translator 202 stair output signals 203 pulse duration modulation conditioner 204 primary side modulator 206 isolated modulated signal 301 demodulator 302 secondary side signal 304 dead time generator 306 output and additional signal sequence 308 level shift 310 voltage increase / decrease circuit 400 pulse input signal 402 input converter 403 hysteresis circuit 404 second inverter 405 hysteresis and buffer power supply 408 hysteresis transistor 409 translator power supply 410 converting output signal 414 translator circuit 418 pulse duration buffer 502 failure signal 504 conditioning patch 506 conditioned output two 508 nor-gate 51 0 or-gate 512 or-gate 514 nor-gate 516 nor-gate 518 conditioned output three 520 conditioned output four 522 signal from input three 530 conditioned output one 532 release signal from input three 550 voltage-controlled oscillator 600 modulator batch 604 primary modulated output 605 first differential output 606 second differential output 608 third differential output 610 fourth differential output 612 current-source transistor 614 low-voltage converters 616 current-ink transistor 618 nor-gates of the modulator 620 remaining nor-gate inputs 621 modulator buffers 622 input waveform of first channel 702 input waveform of second channel 704 first output waveform of modulator wave 706 of modulator 708 carrier frequency of oscillator 802 input voltage of oscillator 803 temperature of oscillator 804 demodulator circuit 900 input phase of demodulator 902 first diode of demodulator 904 second diode of demodulator 906 third diode of dem odulator 908 fourth diode of demodulator 910 parallel resistor 912 demodulated signal 913 inverter 914 capacitor 916 second pass-out connection 920 third pass-out connection 922 buffer 930 first passed signal 940 dead time generator circuit 1000 transistor level delay circuit 1100 of one of the respective delay cells. first dead time NOR gate 1002 second dead time NOR gate 1004 dead time inverter 1006 first non-overlapping signal 1008 second non-overlapping signal 1010 first delay circuit 1020 second delay circuit 1022 third delay circuit 1024 fourth delay circuit 1026 first OR gate 1030 second OR port 1032 first dead time buffer 1040 second dead time buffer 1042 delay circuits 1100 low-voltage inverters 1102 internal capacitors 1104 level shift circuit 1200 capacitor output 1202 capacitor output 1204 first level diode 1206 second level diode 1208 level current supply 1210 pulse duration modulation logic 1300 error amplifier output 1302 signal oscillation oscillator06 oscillator06 oscillator06 oscillator06 oscillator oscillator06 1400 square wave signal with high utilization coefficient 1402 ascending signal 1404 first charge comparator 1406 second charge comparator 1408 current charging capacitor 1410 constant current source 1412 oscillator flip flop 1414 external current resistance 141 6 is used to adjust the current level. fast comparator circuit 1500 pre-amplifier 1502 latch 1504 after-amplifier 150
    Self-biased differential amplifier 1508 comparator output buffer inverter 1510 voltage-transformer circuit of overvoltage protection 1600 leading-edge blanking circuit 1700 blanking flip-flop 1702 blanking comparator 1704 blanking capacitor 1706 undervoltage lockout circuit 1800 undervoltage comparator 1802 undervoltage output 1804 active pull-down junction 18 output06 interchange 18 output06 resistor distribution input 1812 output buffer circuit 1900 output buffer capacitor 1902 output buffer resistor 1904 external source follower transistor 1908 follower capacitor 1910 high side output transistor 1912 follower resistor 1916 middle diode 1918 lower transistor 1914 is switched on gate diode 1920 input waveform from gate control output 200 output controller 21 output control rise time 2302 fall time 2304 dv / dt measurement 2400
    From the foregoing, it will be appreciated that this invention is well suited to achieve all of the objects and objects contained therein, together with other advantages inherent in the structure. It will also be appreciated that certain features and sub-combinations are useful and that they can be used without reference to other features and sub-combinations. This has been included by and falls within the scope of the claims. Many possible embodiments of the invention can be made without departing from the scope thereof. Therefore, it will be understood that all matters which are hereby incorporated or shown on the accompanying drawings are to be interpreted as being illustrative and non-limiting.
    In interpreting the claims of this application, method claims can be recognized by the explicit use of the word "method" in the introduction of the claims and the use of the infinitive form. Process conclusions should not be interpreted as being certain steps in a certain order unless the conclusion element specifically refers to a previous element, a previous action or the result of a previous action. Device conclusions can be recognized by the use of the word "device" in the preamble of the claim and should not be interpreted as including "resources plus function language" unless the word "resources" is specifically used in the claim element. The words "define", "have" or "include" must be interpreted as open words allowing additional elements or structures. When the claims include "a" or "a first" element of its equivalent, such claims should be understood as including one or more such elements, with two or more such elements not being required or excluded.
    权利要求:
    Claims (12)
    [1]
    CONCLUSIONS
    A gate driver, comprising: a primary-side circuit that generates a primary modulated output; an isolation transformer that accepts the primary modulated output and generates an isolated modulated signal; a circuit on the secondary side that accepts the isolated modulated signal and sends a drive signal; and a totem pole output that accepts the drive signal.
    [2]
    The gate driver of claim 1, wherein the circuit on the primary side further comprises: a logic level translator that accepts a peak-to-peak value of the input voltage of three from one third volt to five volts.
    [3]
    The gate driver of claim 2, wherein the primary-side circuit further comprises the following: a hysteresis circuit connected to the logic level translator.
    [4]
    The gate driver of claim 1, wherein the primary side circuit further comprises: a pulse duration modulation conditioning circuit comprising a circuit with overlap protection.
    [5]
    The gate driver of claim 1, wherein the primary side circuit further comprises: a pulse duration modulation conditioner circuit comprising an error protection circuit.
    [6]
    The gate driver of claim 1, wherein the primary side circuit further comprises: a modulator comprising a voltage controlled oscillator.
    [7]
    The gate driver of claim 6, wherein the voltage controlled oscillator further comprises: a ring with one end of low-current inverters.
    [8]
    The gate driver of claim 1, wherein the secondary side circuit further comprises: a demodulator circuit comprising a two-phase rectifier and an external high pass filter connection.
    [9]
    The gate driver of claim 8, wherein the demodulator circuit further comprises: a buffer connected to a low-pass filter connected to a second buffer.
    [10]
    The gate driver of claim 1, wherein the secondary side circuit further comprises: a dead time generator comprising a first nor-gate, a second nor-gate, an inverter connected to the second nor-gate and delay circuits low-voltage inverters separated by capacitors.
    [11]
    The gate driver of claim 1, wherein the totem pole output further comprises: a separate buffer circuit comprising a buffer capacitor; and a buffer resistor connected to a follower junction field effect ransistor.
    [12]
    The gate driver of claim 11, wherein the totem pole output further comprises: the follower junction field effect transistor connected by a follower capacitor parallel to a follower resistor with the gate of a junction field effect transistor; and a middle diode connected to the source of the follower junction field effect transistor; and a gate diode connected from the gate of the junction field effect transistor to the middle diode.
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    同族专利:
    公开号 | 公开日
    US20130009674A1|2013-01-10|
    WO2012177873A2|2012-12-27|
    US8643407B2|2014-02-04|
    WO2012177873A3|2013-03-28|
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    法律状态:
    2021-10-27| PD| Change of ownership|Owner name: CREE, INC.; US Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), MERGE; FORMER OWNER NAME: CREE FAYETTEVILLE, INC. Effective date: 20211006 |
    2021-12-16| HC| Change of name of the owners|Owner name: WOLFSPEED, INC.; US Free format text: DETAILS ASSIGNMENT: CHANGE OF OWNER(S), CHANGE OF OWNER(S) NAME; FORMER OWNER NAME: CREE, INC. Effective date: 20211027 |
    优先权:
    申请号 | 申请日 | 专利标题
    US201161571206P| true| 2011-06-22|2011-06-22|
    US61/571206|2011-06-22|
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